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| UNISONIC TECHNOLOGIES CO., LTD 2SC5027E HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . NPN SILICON TRANSISTOR FEATURES * High Speed Switching * Wide SOA 1 TO-220 1 TO-220F *Pb-free plating product number: 2SC5027EL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC5027E-x-TA3-T 2SC5027EL-x-TA3-T 2SC5027E-x-TF3-T 2SC5027EL-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube 2SC5027EL-x-TA3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-030,B 2SC5027E ABSOLUATE MAXIUM RATINGS (Tc = 25 ) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 750 V Collector-Emitter Voltage VCEO 700 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Power Dissipation PD 50 W Junction Temperature TJ 150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25 , unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEO(SUS) L=2mH, Clamped ICBO VCB=750V, IE=0 IEBO VEB=5V, IC=0 hFE1 VCE=5V, IC=0.2A hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A Cob VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200 tF MIN 750 700 7 700 10 10 40 2 1.5 60 15 0.5 3 0.3 V V pF MHz s s s TYP MAX UNIT V V V V 10 8 CLASSIFICATION of hFE1 CLASSIFICATION RANGE N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-030,B 2SC5027E TYPICAL CHARACTERISTICS Static Characteristic 4.0 3.6 1000 NPN SILICON TRANSISTOR DC Current Gain VCE=5V Collector Current, IC (A) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 5 6 7 8 IB=250 mA IB=200 mA IB=150 mA IB=100 mA IB=80mA IB=60mA IB=50mA IB=40mA IB=30mA IB=20mA IB=10mA IB=0mA DC Current Gain, hFE 3.2 100 10 9 10 1 0.01 100us 0.1 1ms 1 10 Collectoer-Emitter Voltage, VCE (V) Collector Current, IC (A) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 Ic=5IB 4.0 Base-Emitter on Voltage VCE=5V Saturation Voltage, VBE(SAT) , VCE(SAT) (V) Collector Current, Ic (A) 100us 0.1 1ms 1 10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.1 0.01 0.01 Collector Current IC (A) , Base-Emitter Voltage, VBE (V) Switching Time 10 Vcc =400 V 5.IB1= - 2.5.IB2=Ic Safe Operating Area 100 IcMAX.(Pulse) s) Collector Current, Ic (A) 10 IcMAX.(Continuous ) s m 10 0 10 Time, tON, tSTG, tF 1 s 1m 1 s DC 0.1 0.1 0.01 0.01 0.1 1ms 1 10 1E-s 1 10 100 1000 10000 Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-030,B 2SC5027E TYPICAL CHARACTERISTICS(Cont.) Reverse Operating Area 100 80 IB2=-0.3A NPN SILICON TRANSISTOR Power Derating 10 Power Dissipation, PD (W) 100us 1ms 1000 10000 70 60 50 40 30 20 10 Collector Current, Ic (A) 1 0. 1 0.0 1 0 0 25 50 75 100 125 150 175 10 100 Collector-Emitter Voltage, VCE (V) Case Temperature, TC ( ) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-030,B |
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